Europe SiC power semiconductor market is projected to register a CAGR of 18.3% in the forecast period of 2020 to 2027. The new market report contains data for historic year 2018, the base year of calculation is 2019 and the forecast period is 2020 to 2027.


Market Segmentation

Europe SiC Power Semicondutor Market By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), SiC Bare Die, Pin Diode, Junction FET (JFET), Bipolar Junction Transistor (BJT) and Others), Voltage Range (Less than 300V, 301-900V, 901-1700V, 1701V and Above), Application (Power Supplies, Electric Vehicles (EV), EV Charging Infrastructure, Industrial Motor Drives, Inverters, RF Devices and Others), Wafer Size (2 Inch, 4 Inch, 6 Inch and Above), Wafer Type (Blank SiC wafers and SiC Epitaxial Wafers), Vertical (Industrial, Commercial, Automotive, Consumer Electronics, Utilities & Energy, Aerospace & Defense, Medical, IT And Telecommunications and Others), Country (Germany, France, U.K., Italy, Spain, Russia, Turkey, Belgium, Netherlands, Switzerland and Rest of Europe) Industry Trends and Forecast to 2027

Some of the major factors contributing to the growth of the Europe SiC power semiconductor market are:

- Increasing Preference for SiC power semiconductor device in Electric vehicle application.

- High performance and low cost of SiC power wafers.


Market Players

Some of the major players operating in the Europe SiC power semiconductor market are:

- Cree, Inc.
- Infineon Technologies AG
- Microsemi
- Mitsubishi Electric Corporation
- Toshiba Corporation
- Texas Instruments Incorporated
- NXP Semiconductors
- Semiconductor Components Industries, LLC
- STMicroelectronics
- Renesas Electronics Corporation
- Fuji Electric Co., Ltd.
- ROHM CO., LTD.
- GE
- Global Power Technologies Group
- Littelfuse, Inc.
- UnitedSiC
- SEMIKRON
- Hitachi Power Semiconductor Device